On identification of doping profile in semiconductors
نویسندگان
چکیده
This paper concerns the identification of a so-called doping profile (source term) in the system of elliptic equations modeling a semiconductor device. We give several simplification of the model and find useful adjoint problems and asymptotics motivated by applications to inverse problems and by a presence of certain small physical parameters As a result we obtain first uniqueness results for the so-called p − n junction in a realistic industrial situation. Proofs use potential theory, energy estimates, and the Novikov’s method for the inverse problem of gravimetry.
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